DMTH69M8LFVW-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 15.9/45.4A PWRDI
$0.30
Available to order
Reference Price (USD)
1+
$0.30257
500+
$0.2995443
1000+
$0.2965186
1500+
$0.2934929
2000+
$0.2904672
2500+
$0.2874415
Exquisite packaging
Discount
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Optimize your electronic systems with DMTH69M8LFVW-13, a high-quality Transistors - FETs, MOSFETs - Single from Diodes Incorporated. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, DMTH69M8LFVW-13 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 15.9A (Ta), 45.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.6W (Ta), 29.4W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
- Package / Case: 8-PowerVDFN
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