FCH041N65EFL4
Fairchild Semiconductor
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, N
$7.45
Available to order
Reference Price (USD)
1+
$12.00000
10+
$10.79700
450+
$8.15807
900+
$6.86237
1,350+
$6.47846
Exquisite packaging
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Discover FCH041N65EFL4, a versatile Transistors - FETs, MOSFETs - Single solution from Fairchild Semiconductor, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V
- Vgs(th) (Max) @ Id: 5V @ 7.6mA
- Gate Charge (Qg) (Max) @ Vgs: 298 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 12560 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 595W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247
- Package / Case: TO-247-4
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