SI8819EDB-T2-E1
Vishay Siliconix
Vishay Siliconix
MOSFET P-CH 12V 2.9A 4MICRO FOOT
$0.45
Available to order
Reference Price (USD)
3,000+
$0.12905
6,000+
$0.12123
15,000+
$0.11340
30,000+
$0.10402
75,000+
$0.10011
Exquisite packaging
Discount
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Experience the power of SI8819EDB-T2-E1, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, SI8819EDB-T2-E1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 3.7V
- Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 3.7V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-MICRO FOOT® (0.8x0.8)
- Package / Case: 4-XFBGA
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