DMN3060LWQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V~30V SOT323 T&R
$0.09
Available to order
Reference Price (USD)
1+
$0.09064
500+
$0.0897336
1000+
$0.0888272
1500+
$0.0879208
2000+
$0.0870144
2500+
$0.086108
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with DMN3060LWQ-7, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust DMN3060LWQ-7 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 60mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
Related Products
Diodes Incorporated
DMTH8008LPSQ-13
Diodes Incorporated
DMP26M7UFG-7
Renesas Electronics America Inc
2SJ143(1)-S6-AZ
Diodes Incorporated
DMNH10H028SPS-13
Infineon Technologies
SPA21N50C3XKSA1
Renesas Electronics America Inc
RJK0358DPA-01#J0
Diodes Incorporated
DMN1008UFDFQ-7
Micro Commercial Co
MCB200N06YA-TP
onsemi
FDMC7696-L701
Infineon Technologies