SPA21N50C3XKSA1
Infineon Technologies
Infineon Technologies
HIGH POWER_LEGACY
$2.37
Available to order
Reference Price (USD)
500+
$2.62286
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of SPA21N50C3XKSA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, SPA21N50C3XKSA1 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 560 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
- Vgs(th) (Max) @ Id: 3.9V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 34.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-31
- Package / Case: TO-220-3 Full Pack
Related Products
Renesas Electronics America Inc
RJK0358DPA-01#J0
Diodes Incorporated
DMN1008UFDFQ-7
Micro Commercial Co
MCB200N06YA-TP
onsemi
FDMC7696-L701
Infineon Technologies
ISK024NE2LM5AULA1
Diodes Incorporated
DMTH4004SPS-13
Infineon Technologies
IPZA65R018CFD7XKSA1
Infineon Technologies
IPN70R2K1CEATMA1
Toshiba Semiconductor and Storage
TK090E65Z,S1X
Diodes Incorporated