SI8800EDB-T2-E1
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 20V 4MICROFOOT
$0.49
Available to order
Reference Price (USD)
3,000+
$0.17272
6,000+
$0.16157
15,000+
$0.15043
30,000+
$0.14263
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with SI8800EDB-T2-E1, a high-quality Transistors - FETs, MOSFETs - Single from Vishay Siliconix. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, SI8800EDB-T2-E1 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 80mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-Microfoot
- Package / Case: 4-XFBGA, CSPBGA
Related Products
Taiwan Semiconductor Corporation
TSM3401CX RFG
Nexperia USA Inc.
2N7002,215
IXYS
IXFH30N60P
Infineon Technologies
IPBE65R075CFD7AATMA1
Infineon Technologies
AUIRFS4010-7TRL
onsemi
NTGS3443T1G
onsemi
NTTFS022N15MC
Renesas Electronics America Inc
NP110N04PUK-E1-AY
NTE Electronics, Inc
NTE2398
IXYS