NP110N04PUK-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 40V 110A TO263-3
$5.04
Available to order
Reference Price (USD)
1+
$5.04000
500+
$4.9896
1000+
$4.9392
1500+
$4.8888
2000+
$4.8384
2500+
$4.788
Exquisite packaging
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Enhance your circuit performance with NP110N04PUK-E1-AY, a premium Transistors - FETs, MOSFETs - Single from Renesas Electronics America Inc. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust NP110N04PUK-E1-AY for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.4mOhm @ 55A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 297 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 15750 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263-3
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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