SI4490DY-T1-GE3
Vishay Siliconix
Vishay Siliconix
MOSFET N-CH 200V 2.85A 8SO
$2.30
Available to order
Reference Price (USD)
2,500+
$0.86962
5,000+
$0.83741
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of SI4490DY-T1-GE3, a premium Transistors - FETs, MOSFETs - Single from Vishay Siliconix. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, SI4490DY-T1-GE3 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 2.85A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 80mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
- Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): 1.56W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Taiwan Semiconductor Corporation
TSM033NB04CR RLG
Vishay Siliconix
SI4838DY-T1-E3
Infineon Technologies
BSC050N10NS5ATMA1
Rectron USA
RM18P100HDE
STMicroelectronics
STP2NK90Z
Vishay Siliconix
IRFR110TRLPBF
Vishay Siliconix
SIR638DP-T1-GE3
Infineon Technologies
IPW65R065C7XKSA1
Infineon Technologies
IMBF170R650M1XTMA1
onsemi