IMBF170R650M1XTMA1
Infineon Technologies
Infineon Technologies
SICFET N-CH 1700V 7.4A TO263-7
$7.94
Available to order
Reference Price (USD)
1+
$7.94000
500+
$7.8606
1000+
$7.7812
1500+
$7.7018
2000+
$7.6224
2500+
$7.543
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies presents IMBF170R650M1XTMA1, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, IMBF170R650M1XTMA1 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1700 V
- Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 12V, 15V
- Rds On (Max) @ Id, Vgs: 650mOhm @ 1.5A, 15V
- Vgs(th) (Max) @ Id: 5.7V @ 1.7mA
- Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 12 V
- Vgs (Max): +20V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 422 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 88W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-7-13
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Related Products
onsemi
MTP1N50E
Infineon Technologies
SPU02N60S5XK
GeneSiC Semiconductor
GA50JT12-247
onsemi
HUF75639P3
Panjit International Inc.
PJA3405-AU_R2_000A1
Infineon Technologies
AUIRL1404ZS
Microchip Technology
APT8020B2FLLG
Texas Instruments
CSD17577Q3A
Renesas Electronics America Inc
2SK3712-Z-E1-AZ
Vishay Siliconix