IPW65R065C7XKSA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 650V 33A TO247-3
$12.20
Available to order
Reference Price (USD)
1+
$9.86000
10+
$8.93700
240+
$7.46154
720+
$6.35489
1,200+
$5.61712
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IPW65R065C7XKSA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IPW65R065C7XKSA1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 65mOhm @ 17.1A, 10V
- Vgs(th) (Max) @ Id: 4V @ 850µA
- Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 171W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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