IXTH52P10P
IXYS
IXYS
MOSFET P-CH 100V 52A TO247
$8.31
Available to order
Reference Price (USD)
30+
$5.13000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IXTH52P10P by IXYS. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IXTH52P10P inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 50mOhm @ 52A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247 (IXTH)
- Package / Case: TO-247-3
Related Products
Microchip Technology
APT5010JVRU3
Infineon Technologies
IPN65R1K5CEATMA1
STMicroelectronics
STF100N6F7
IXYS
IXTP02N50D
Fairchild Semiconductor
FQPF7P06
Infineon Technologies
IPP60R105CFD7XKSA1
Vishay Siliconix
SISA18ADN-T1-GE3
onsemi
NVB5404NT4G
onsemi
FQP7P06
Alpha & Omega Semiconductor Inc.