SI2309CDS-T1-BE3
Vishay Siliconix
Vishay Siliconix
P-CHANNEL 60-V (D-S) MOSFET
$0.57
Available to order
Reference Price (USD)
1+
$0.57000
500+
$0.5643
1000+
$0.5586
1500+
$0.5529
2000+
$0.5472
2500+
$0.5415
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with SI2309CDS-T1-BE3, a reliable Transistors - FETs, MOSFETs - Single by Vishay Siliconix. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, SI2309CDS-T1-BE3 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 1.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 345mOhm @ 1.25A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3 (TO-236)
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Diodes Incorporated
DMN53D0U-13
onsemi
HUF76423P3
Goford Semiconductor
G75P04K
Vishay Siliconix
SQD50N04-4M5L_GE3
Vishay Siliconix
SQJA80EP-T1_GE3
onsemi
NTD50N03RG
Diodes Incorporated
DMP1022UFDF-7
Infineon Technologies
IRF1407STRLPBF
IXYS
IXTT88N30P
Infineon Technologies