DMP1022UFDF-7
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 12V 9.5A 6UDFN
$0.57
Available to order
Reference Price (USD)
1+
$0.57000
500+
$0.5643
1000+
$0.5586
1500+
$0.5529
2000+
$0.5472
2500+
$0.5415
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose DMP1022UFDF-7 by Diodes Incorporated. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with DMP1022UFDF-7 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 15.3mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48.3 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 2712 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 730mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
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