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G75P04K

Goford Semiconductor
G75P04K Preview
Goford Semiconductor
P40V,RD(MAX)<10M@-10V,VTH-1.2V~-
$1.45
Available to order
Reference Price (USD)
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$1.45000
500+
$1.4355
1000+
$1.421
1500+
$1.4065
2000+
$1.392
2500+
$1.3775
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 10A, 20V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5380 pF @ 20 V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

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