Shopping cart

Subtotal: $0.00

3LN01C-TB-H

onsemi
3LN01C-TB-H Preview
onsemi
MOSFET N-CH 30V 150MA 3CP
$0.07
Available to order
Reference Price (USD)
1+
$0.07000
500+
$0.0693
1000+
$0.0686
1500+
$0.0679
2000+
$0.0672
2500+
$0.0665
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
  • Rds On (Max) @ Id, Vgs: 3.7Ohm @ 80mA, 4V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 1.58 nC @ 10 V
  • Vgs (Max): ±10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 250mW (Ta)
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SC-59-3/CP3
  • Package / Case: TO-236-3, SC-59, SOT-23-3

Related Products

Toshiba Semiconductor and Storage

TPH2R104PL,LQ

Vishay Siliconix

SQJA62EP-T1_GE3

Infineon Technologies

IPB77N06S212ATMA2

Infineon Technologies

IRL7833PBF

Infineon Technologies

IPB017N08N5ATMA1

Taiwan Semiconductor Corporation

TQM110NB04CR RLG

Harris Corporation

IRF151

Infineon Technologies

IRF9332TRPBF

Top