SCT3060ARC14
Rohm Semiconductor
Rohm Semiconductor
SICFET N-CH 650V 39A TO247-4L
$25.42
Available to order
Reference Price (USD)
1+
$25.42000
500+
$25.1658
1000+
$24.9116
1500+
$24.6574
2000+
$24.4032
2500+
$24.149
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose SCT3060ARC14 by Rohm Semiconductor. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with SCT3060ARC14 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 78mOhm @ 13A, 18V
- Vgs(th) (Max) @ Id: 5.6V @ 6.67mA
- Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 18 V
- Vgs (Max): +22V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 852 pF @ 500 V
- FET Feature: -
- Power Dissipation (Max): 165W
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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