FQL50N40
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 400V 50A TO264-3
$7.16
Available to order
Reference Price (USD)
1+
$7.16000
500+
$7.0884
1000+
$7.0168
1500+
$6.9452
2000+
$6.8736
2500+
$6.802
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose FQL50N40 by Fairchild Semiconductor. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with FQL50N40 inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 400 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 75mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 460W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: HPM F2
- Package / Case: TO-264-3, TO-264AA
Related Products
Infineon Technologies
IPA60R400CEXKSA1
Vishay Siliconix
IRF730STRLPBF
onsemi
NTD4969N-35G
Nexperia USA Inc.
PSMN7R0-30YLC,115
Infineon Technologies
BSP89H6327XTSA1
STMicroelectronics
STD16NF06T4
Vishay Siliconix
SI2323DS-T1-GE3
Toshiba Semiconductor and Storage
TK14A45D(STA4,Q,M)
Infineon Technologies
SPB21N50C3ATMA1
IXYS