DMT10H072LFV-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 100V PWRDI3333
$0.63
Available to order
Reference Price (USD)
1+
$0.63000
500+
$0.6237
1000+
$0.6174
1500+
$0.6111
2000+
$0.6048
2500+
$0.5985
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Diodes Incorporated presents DMT10H072LFV-7, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, DMT10H072LFV-7 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 62mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 228 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8 (Type UX)
- Package / Case: 8-PowerVDFN
Related Products
Microchip Technology
APT1201R5BVRG
Infineon Technologies
IPB60R099C6ATMA1
STMicroelectronics
STP150NF04
Infineon Technologies
IPN70R1K4P7SATMA1
Diodes Incorporated
ZXMP10A17KTC
Alpha & Omega Semiconductor Inc.
AON6224
IXYS
IXFH100N25P
onsemi
NTA4151PT1G
Fairchild Semiconductor
FQL50N40
Infineon Technologies