2SJ604-Z-AZ

Specifications

• Product Status: Obsolete
• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Rds On (Max) @ Id, Vgs: 30mOhm @ 23A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
• Vgs (Max): ±20V
• Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta), 70W (Tc)
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263, TO-220SMD
• Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB