IPT063N15N5ATMA1
Infineon Technologies
Infineon Technologies
TRENCH >=100V PG-HSOF-8
$6.64
Available to order
Reference Price (USD)
1+
$6.64000
500+
$6.5736
1000+
$6.5072
1500+
$6.4408
2000+
$6.3744
2500+
$6.308
Exquisite packaging
Discount
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Enhance your circuit performance with IPT063N15N5ATMA1, a premium Transistors - FETs, MOSFETs - Single from Infineon Technologies. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust IPT063N15N5ATMA1 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150 V
- Current - Continuous Drain (Id) @ 25°C: 16.2A (Ta), 122A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
- Rds On (Max) @ Id, Vgs: 6.3mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 4.6V @ 153µA
- Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 75 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 214W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8
- Package / Case: 8-PowerSFN
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