RQ3E180BNTB1
Rohm Semiconductor
Rohm Semiconductor
NCH 30V 39A MIDDLE POWER MOSFET:
$0.68
Available to order
Reference Price (USD)
1+
$0.68221
500+
$0.6753879
1000+
$0.6685658
1500+
$0.6617437
2000+
$0.6549216
2500+
$0.6480995
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose RQ3E180BNTB1 by Rohm Semiconductor. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with RQ3E180BNTB1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 39A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.9mOhm @ 18A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2W (Ta), 20W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSMT (3.2x3)
- Package / Case: 8-PowerVDFN
Related Products
Microchip Technology
APTM100UM65DAG
Rohm Semiconductor
R6024KNXC7G
Diodes Incorporated
DMP1008UCB9-7
Renesas Electronics America Inc
2SK3057-AZ
Renesas Electronics America Inc
2SK1850(0)-T-AZ
Micro Commercial Co
MCAC38N10YHE3-TP
Nexperia USA Inc.
PXP6R1-30QLJ
IXYS
IXFL34N100
Diodes Incorporated
DMT10H032LFVW-13
Infineon Technologies