DMP1008UCB9-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V U-WLB1515-9
$0.33
Available to order
Reference Price (USD)
1+
$0.33080
500+
$0.327492
1000+
$0.324184
1500+
$0.320876
2000+
$0.317568
2500+
$0.31426
Exquisite packaging
Discount
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Boost your electronic applications with DMP1008UCB9-7, a reliable Transistors - FETs, MOSFETs - Single by Diodes Incorporated. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, DMP1008UCB9-7 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 8 V
- Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 5.7mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
- Vgs (Max): -6V
- Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 4 V
- FET Feature: -
- Power Dissipation (Max): 840mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-WLB1515-9
- Package / Case: 9-UFBGA, WLBGA
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