RJK60S3DPP-E0#T2
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET N-CH 600V 12A TO220FP
$3.41
Available to order
Reference Price (USD)
1+
$3.41000
500+
$3.3759
1000+
$3.3418
1500+
$3.3077
2000+
$3.2736
2500+
$3.2395
Exquisite packaging
Discount
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Boost your electronic applications with RJK60S3DPP-E0#T2, a reliable Transistors - FETs, MOSFETs - Single by Renesas Electronics America Inc. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, RJK60S3DPP-E0#T2 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 440mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
- FET Feature: Super Junction
- Power Dissipation (Max): 27.7W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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