RJP65T43DPM-00#T1
Renesas Electronics America Inc
Renesas Electronics America Inc
ABU / IGBT
$4.44
Available to order
Reference Price (USD)
1+
$4.44000
500+
$4.3956
1000+
$4.3512
1500+
$4.3068
2000+
$4.2624
2500+
$4.218
Exquisite packaging
Discount
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The RJP65T43DPM-00#T1 Single IGBT from Renesas Electronics America Inc delivers unmatched performance in power conversion and control. Ideal for UPS systems, induction heating, and industrial automation, this transistor combines high efficiency with rugged reliability. Features such as short-circuit protection and low EMI make it a standout choice. Renesas Electronics America Inc's commitment to innovation ensures RJP65T43DPM-00#T1 meets the demands of modern electronics. Get in touch for bulk orders and customization options!
Specifications
- Product Status: Active
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 40 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
- Power - Max: 68.8 W
- Switching Energy: 170µJ (on), 110µJ (off)
- Input Type: Standard
- Gate Charge: 70 nC
- Td (on/off) @ 25°C: 30ns/107ns
- Test Condition: 400V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: TO-3PFM
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