IKW08N120CS7XKSA1
Infineon Technologies
Infineon Technologies
INDUSTRY 14 PG-TO247-3
$4.05
Available to order
Reference Price (USD)
1+
$4.05000
500+
$4.0095
1000+
$3.969
1500+
$3.9285
2000+
$3.888
2500+
$3.8475
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IKW08N120CS7XKSA1 Single IGBT by Infineon Technologies sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with Infineon Technologies for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 21 A
- Current - Collector Pulsed (Icm): 24 A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
- Power - Max: 106 W
- Switching Energy: 370µJ (on), 400µJ (off)
- Input Type: Standard
- Gate Charge: 52 nC
- Td (on/off) @ 25°C: 17ns/160ns
- Test Condition: 600V, 8A, 20Ohm, 15V
- Reverse Recovery Time (trr): 130 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
Related Products
IXYS
IXXH140N65C4
Infineon Technologies
FZ2400R12HE4B9NPSA1
STMicroelectronics
STGP30H65DFB2
onsemi
FGB3236-F085C
Infineon Technologies
FZ1800R12HP4B9NPSA1
Harris Corporation
HGTG32N60E2
Renesas Electronics America Inc
RJP4006AGE-01#P5
Toshiba Semiconductor and Storage
GT40RR21(STA1,E
Infineon Technologies
FS200R12PT4
Harris Corporation