HGTG32N60E2
Harris Corporation
Harris Corporation
50A, 600V N-CHANNEL IGBT
$7.33
Available to order
Reference Price (USD)
1+
$7.33000
500+
$7.2567
1000+
$7.1834
1500+
$7.1101
2000+
$7.0368
2500+
$6.9635
Exquisite packaging
Discount
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Discover high-performance HGTG32N60E2 Single IGBTs from Harris Corporation, designed for efficient power management in various industrial applications. These transistors offer superior switching capabilities and thermal performance, making them ideal for motor drives, renewable energy systems, and power supplies. Features include low saturation voltage, high current capacity, and robust construction. Whether you're upgrading existing systems or designing new solutions, HGTG32N60E2 ensures reliability and efficiency. Contact us today for pricing and technical support!
Specifications
- Product Status: Active
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 200 A
- Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 32A
- Power - Max: 208 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 265 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247
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