RJK1003DPP-E0#T2
Renesas
Renesas
RJK1003DPP - N-CHANNEL MOSFET 10
$2.22
Available to order
Reference Price (USD)
1+
$2.21519
500+
$2.1930381
1000+
$2.1708862
1500+
$2.1487343
2000+
$2.1265824
2500+
$2.1044305
Exquisite packaging
Discount
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Upgrade your electronic designs with RJK1003DPP-E0#T2 by Renesas, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, RJK1003DPP-E0#T2 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 11mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 25W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FP
- Package / Case: TO-220-3 Full Pack
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