MSCSM120SKM31CTBL1NG
Microchip Technology
Microchip Technology
PM-MOSFET-SIC-SBD-BL1
$125.80
Available to order
Reference Price (USD)
1+
$125.80000
500+
$124.542
1000+
$123.284
1500+
$122.026
2000+
$120.768
2500+
$119.51
Exquisite packaging
Discount
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Boost your electronic applications with MSCSM120SKM31CTBL1NG, a reliable Transistors - FETs, MOSFETs - Single by Microchip Technology. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, MSCSM120SKM31CTBL1NG meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 79A
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
- Vgs(th) (Max) @ Id: 2.8V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 232 nC @ 20 V
- Vgs (Max): +25V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 3020 pF @ 1000 V
- FET Feature: -
- Power Dissipation (Max): 310W
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: -
- Package / Case: Module
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