DMTH6006LPSW-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 17.2A/100A PWRDI
$0.43
Available to order
Reference Price (USD)
1+
$0.42858
500+
$0.4242942
1000+
$0.4200084
1500+
$0.4157226
2000+
$0.4114368
2500+
$0.407151
Exquisite packaging
Discount
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Discover high-performance DMTH6006LPSW-13 from Diodes Incorporated, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, DMTH6006LPSW-13 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 17.2A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 34.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2162 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.88W (Ta), 100W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8 (Type Q)
- Package / Case: 8-PowerTDFN
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