IAUT165N08S5N029ATMA1
Infineon Technologies
Infineon Technologies
MOSFET N-CH 80V 165A 8HSOF
$2.94
Available to order
Reference Price (USD)
1+
$2.93640
500+
$2.907036
1000+
$2.877672
1500+
$2.848308
2000+
$2.818944
2500+
$2.78958
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose IAUT165N08S5N029ATMA1 by Infineon Technologies. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with IAUT165N08S5N029ATMA1 inquire now for more details!
Specifications
- Product Status: Not For New Designs
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 165A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 3.8V @ 108µA
- Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 167W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-HSOF-8-1
- Package / Case: 8-PowerSFN
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