RJH60A01RDPD-A0#J2
Renesas Electronics America Inc
Renesas Electronics America Inc
IGBT 600V 5A
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The RJH60A01RDPD-A0#J2 Single IGBT by Renesas Electronics America Inc sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with Renesas Electronics America Inc for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Obsolete
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 10 A
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 5A
- Power - Max: 29.4 W
- Switching Energy: 130µJ (on), 70µJ (off)
- Input Type: Standard
- Gate Charge: 11 nC
- Td (on/off) @ 25°C: 30ns/40ns
- Test Condition: 300V, 5A, 5Ohm, 15V
- Reverse Recovery Time (trr): 100 ns
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
Related Products
Toshiba Semiconductor and Storage
GT8G133(TE12L,Q)
Infineon Technologies
IRG4PSH71KD
STMicroelectronics
STGF30NC60S
IXYS
IXGH12N60C
Infineon Technologies
IRGP4063D-EPBF
STMicroelectronics
STGB6NC60HD-1
IXYS
IXSH40N60B2D1
SemiQ
GPA030A135MN-FDR
Infineon Technologies
SGI02N120XKSA1
STMicroelectronics