GPA030A135MN-FDR
SemiQ
SemiQ
IGBT 1350V 60A 329W TO3PN
$0.00
Available to order
Reference Price (USD)
2,500+
$2.39400
Exquisite packaging
Discount
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The GPA030A135MN-FDR Single IGBT from SemiQ delivers unmatched performance in power conversion and control. Ideal for UPS systems, induction heating, and industrial automation, this transistor combines high efficiency with rugged reliability. Features such as short-circuit protection and low EMI make it a standout choice. SemiQ's commitment to innovation ensures GPA030A135MN-FDR meets the demands of modern electronics. Get in touch for bulk orders and customization options!
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1350 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
- Power - Max: 329 W
- Switching Energy: 4.4mJ (on), 1.18mJ (off)
- Input Type: Standard
- Gate Charge: 300 nC
- Td (on/off) @ 25°C: 30ns/145ns
- Test Condition: 600V, 30A, 5Ohm, 15V
- Reverse Recovery Time (trr): 450 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3PN
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