RJ1L12CGNTLL
Rohm Semiconductor
Rohm Semiconductor
NCH 60V 120A POWER MOSFET: RJ1L1
$3.47
Available to order
Reference Price (USD)
1+
$3.46808
500+
$3.4333992
1000+
$3.3987184
1500+
$3.3640376
2000+
$3.3293568
2500+
$3.294676
Exquisite packaging
Discount
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Boost your electronic applications with RJ1L12CGNTLL, a reliable Transistors - FETs, MOSFETs - Single by Rohm Semiconductor. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, RJ1L12CGNTLL meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.4mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7100 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 166W (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AB
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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