RH6P040BHTB1
Rohm Semiconductor
Rohm Semiconductor
NCH 100V 40A, HSMT8, POWER MOSFE
$1.93
Available to order
Reference Price (USD)
1+
$1.93000
500+
$1.9107
1000+
$1.8914
1500+
$1.8721
2000+
$1.8528
2500+
$1.8335
Exquisite packaging
Discount
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Rohm Semiconductor presents RH6P040BHTB1, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, RH6P040BHTB1 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 15.6mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 59W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSMT (3.2x3)
- Package / Case: 8-PowerVDFN
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