FDMC4435BZ-F127-L701
onsemi
onsemi
SINGLE ST3 P Z MLP3.3X3.3
$0.55
Available to order
Reference Price (USD)
1+
$0.54716
500+
$0.5416884
1000+
$0.5362168
1500+
$0.5307452
2000+
$0.5252736
2500+
$0.519802
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose FDMC4435BZ-F127-L701 by onsemi. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with FDMC4435BZ-F127-L701 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.3W (Ta), 31W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-MLP (3.3x3.3)
- Package / Case: 8-PowerWDFN
Related Products
Renesas
UPA2706GR-E1-A
Harris Corporation
IRF830
Micro Commercial Co
MCAC150N03A-TP
NXP Semiconductors
PMPB20EN/S500X
Harris Corporation
RF1S45N06LESM
onsemi
NTP185N60S5H
Renesas Electronics America Inc
N0400P-ZK-E1-AY
Renesas Electronics America Inc
2SJ206-T1-AZ
Diodes Incorporated
DMTH8008SFG-7
Diodes Incorporated