UPA2706GR-E1-A
Renesas
Renesas
UPA2706GR-E1-A - MOS FIELD EFFEC
$1.06
Available to order
Reference Price (USD)
1+
$1.05560
500+
$1.045044
1000+
$1.034488
1500+
$1.023932
2000+
$1.013376
2500+
$1.00282
Exquisite packaging
Discount
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Renesas presents UPA2706GR-E1-A, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, UPA2706GR-E1-A delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
- Rds On (Max) @ Id, Vgs: 15mOhm @ 5.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 7.1 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 15W (Tc)
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
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