RGS60TS65DHRC11
Rohm Semiconductor
Rohm Semiconductor
650V 30A FIELD STOP TRENCH IGBT.
$7.27
Available to order
Reference Price (USD)
1+
$7.27000
500+
$7.1973
1000+
$7.1246
1500+
$7.0519
2000+
$6.9792
2500+
$6.9065
Exquisite packaging
Discount
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Optimize power control with RGS60TS65DHRC11 Single IGBTs from Rohm Semiconductor, a leader in semiconductor solutions. Suited for medical equipment, aerospace, and consumer electronics, these transistors deliver precise switching and minimal noise. Highlights include high input impedance, scalable power ratings, and RoHS compliance. Rohm Semiconductor ensures RGS60TS65DHRC11 meets rigorous performance benchmarks. Inquire today to find the perfect fit for your application!
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 56 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
- Power - Max: 223 W
- Switching Energy: 660µJ (on), 810µJ (off)
- Input Type: Standard
- Gate Charge: 36 nC
- Td (on/off) @ 25°C: 28ns/104ns
- Test Condition: 400V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr): 103 ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247N
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