IXXH100N60B3
IXYS
IXYS
IGBT 600V 220A 830W TO247AD
$15.20
Available to order
Reference Price (USD)
30+
$9.96500
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The IXXH100N60B3 Single IGBT by IXYS sets the standard for power semiconductor excellence. Designed for applications like electric vehicles and industrial machinery, it offers high current density and minimal thermal resistance. Key benefits include easy integration, superior durability, and compliance with international certifications. Partner with IXYS for cutting-edge solutions tailored to your needs. Contact us now to discuss specifications and delivery options!
Specifications
- Product Status: Active
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 220 A
- Current - Collector Pulsed (Icm): 480 A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 70A
- Power - Max: 830 W
- Switching Energy: 1.9mJ (on), 2mJ (off)
- Input Type: Standard
- Gate Charge: 143 nC
- Td (on/off) @ 25°C: 30ns/120ns
- Test Condition: 360V, 70A, 2Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247 (IXXH)
Related Products
Renesas Electronics America Inc
RJP4002ANS-00#Q1
Infineon Technologies
SGD02N60BUMA1
Alpha & Omega Semiconductor Inc.
AOK10B60D
Rohm Semiconductor
RGW80TK65GVC11
Infineon Technologies
IKW30N65ES5XKSA1
Infineon Technologies
SGB02N120ATMA1
onsemi
HGTG11N120CND
STMicroelectronics
STGW15H120DF2
STMicroelectronics
STGWT20V60DF
Rohm Semiconductor