RFD14N06
Harris Corporation
Harris Corporation
N-CHANNEL POWER MOSFET
$0.57
Available to order
Reference Price (USD)
1+
$0.57000
500+
$0.5643
1000+
$0.5586
1500+
$0.5529
2000+
$0.5472
2500+
$0.5415
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of RFD14N06, a premium Transistors - FETs, MOSFETs - Single from Harris Corporation. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, RFD14N06 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 20 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 48W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-PAK
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
Diodes Incorporated
DMTH6012LPSWQ-13
Renesas Electronics America Inc
2SJ143(04)-S6-AZ
onsemi
NVMYS006N08LHTWG
Renesas Electronics America Inc
RJK1002DPP-A0#T2
Fairchild Semiconductor
FDC699P
Micro Commercial Co
MCU20N10-TP
Diodes Incorporated
DMT34M2LPS-13
Rohm Semiconductor
RQ3E180BNTB1
Microchip Technology
APTM100UM65DAG
Rohm Semiconductor