NVMYS006N08LHTWG
onsemi
onsemi
T8 80V LL LFPAK
$1.00
Available to order
Reference Price (USD)
1+
$1.00178
500+
$0.9917622
1000+
$0.9817444
1500+
$0.9717266
2000+
$0.9617088
2500+
$0.951691
Exquisite packaging
Discount
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Discover high-performance NVMYS006N08LHTWG from onsemi, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, NVMYS006N08LHTWG delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 77A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 6.2mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id: 2V @ 95µA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: LFPAK4 (5x6)
- Package / Case: SOT-1023, 4-LFPAK
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