BSP296L6433
Infineon Technologies
Infineon Technologies
SMALL-SIGNAL N-CHANNEL MOSFET
$0.25
Available to order
Reference Price (USD)
1+
$0.25000
500+
$0.2475
1000+
$0.245
1500+
$0.2425
2000+
$0.24
2500+
$0.2375
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
BSP296L6433 by Infineon Technologies is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, BSP296L6433 ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 700mOhm @ 1.1A, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 400µA
- Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.79W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-SOT223
- Package / Case: TO-261-4, TO-261AA
Related Products
STMicroelectronics
SCTWA90N65G2V-4
onsemi
NTTFS3D7N06HLTWG
Diodes Incorporated
DMP31D0U-7
Fairchild Semiconductor
NDS9410A
Toshiba Semiconductor and Storage
TK65S04N1L,LQ
Infineon Technologies
IRF1405PBF
IXYS
IXFH22N65X2
Infineon Technologies
AUIRFS3004-7TRL
Nexperia USA Inc.
PSMN5R5-60YS,115
STMicroelectronics