DMN2053UWQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V SOT323 T&R
$0.09
Available to order
Reference Price (USD)
1+
$0.08734
500+
$0.0864666
1000+
$0.0855932
1500+
$0.0847198
2000+
$0.0838464
2500+
$0.082973
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with DMN2053UWQ-7, a high-quality Transistors - FETs, MOSFETs - Single from Diodes Incorporated. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, DMN2053UWQ-7 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 56mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 369 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2.9A (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-323
- Package / Case: SC-70, SOT-323
Related Products
Renesas Electronics America Inc
2SK2595AXTB-E
Toshiba Semiconductor and Storage
TK3A90E,S4X
Diodes Incorporated
DMTH8008SFG-13
Renesas Electronics America Inc
2SJ143(2)-S6-AZ
Renesas Electronics America Inc
2SK3793-AZ
Renesas Electronics America Inc
RJK0212DPA-00#J5A
Harris Corporation
IRF120
onsemi
NTPF360N65S3H
Infineon Technologies
IPW65R125CFD7XKSA1
Renesas Electronics America Inc