R6509END3TL1
Rohm Semiconductor
Rohm Semiconductor
650V 9A TO-252, LOW-NOISE POWER
$2.36
Available to order
Reference Price (USD)
1+
$2.36000
500+
$2.3364
1000+
$2.3128
1500+
$2.2892
2000+
$2.2656
2500+
$2.242
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose R6509END3TL1 by Rohm Semiconductor. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with R6509END3TL1 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 585mOhm @ 2.8A, 10V
- Vgs(th) (Max) @ Id: 4V @ 230µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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