2SK1165-E
Renesas Electronics America Inc
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
$3.06
Available to order
Reference Price (USD)
1+
$3.06000
500+
$3.0294
1000+
$2.9988
1500+
$2.9682
2000+
$2.9376
2500+
$2.907
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
2SK1165-E by Renesas Electronics America Inc is a standout in the Discrete Semiconductor Products market, specifically for Transistors - FETs, MOSFETs - Single applications. Engineered for precision, this MOSFET offers exceptional gate control, low leakage current, and high power density. Ideal for use in audio amplifiers, DC-DC converters, and battery management systems, 2SK1165-E ensures top-tier performance. Don t miss out on this versatile component request a sample or quote now!
Specifications
- Product Status: Active
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): -
- Input Capacitance (Ciss) (Max) @ Vds: -
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
Related Products
Fairchild Semiconductor
FDU6296
Rohm Semiconductor
RRR040P03HZGTL
Diodes Incorporated
DI9405T
STMicroelectronics
STF6N60M2
onsemi
NTB5412NT4G
Texas Instruments
CSD22206WT
Vishay Siliconix
SQ4410EY-T1_GE3
onsemi
FQB34N20LTM
Infineon Technologies
IPB65R150CFDATMA1
Vishay Siliconix