PMXB65UPEZ
Nexperia USA Inc.
Nexperia USA Inc.
MOSFET P-CH 12V 3.2A DFN1010D-3
$0.50
Available to order
Reference Price (USD)
5,000+
$0.08920
10,000+
$0.08040
25,000+
$0.07600
50,000+
$0.06852
125,000+
$0.06632
Exquisite packaging
Discount
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Discover PMXB65UPEZ, a versatile Transistors - FETs, MOSFETs - Single solution from Nexperia USA Inc., a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 72mOhm @ 3.2A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 317mW (Ta), 8.33W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DFN1010D-3
- Package / Case: 3-XDFN Exposed Pad
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