R6011KNX
Rohm Semiconductor
Rohm Semiconductor
MOSFET N-CH 600V 11A TO220FM
$2.05
Available to order
Reference Price (USD)
1+
$1.62000
10+
$1.45800
100+
$1.17150
500+
$0.96250
1,000+
$0.79750
2,500+
$0.77000
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with R6011KNX by Rohm Semiconductor, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, R6011KNX ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 53W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220FM
- Package / Case: TO-220-3 Full Pack
Related Products
Vishay Siliconix
IRF730ASPBF
Alpha & Omega Semiconductor Inc.
AOI360A70
Infineon Technologies
IAUC120N04S6L009ATMA1
Renesas Electronics America Inc
NP75P04YLG-E1-AY
Diodes Incorporated
DMT12H090LFDF4-7
Fairchild Semiconductor
FDI9409-F085
Alpha & Omega Semiconductor Inc.
AON6358
onsemi
HUF75639S3ST
Microchip Technology
APT1003RSLLG
Diodes Incorporated