DMT12H090LFDF4-7
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 115V 3.4A 6DFN
$0.40
Available to order
Reference Price (USD)
1+
$0.39588
500+
$0.3919212
1000+
$0.3879624
1500+
$0.3840036
2000+
$0.3800448
2500+
$0.376086
Exquisite packaging
Discount
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Diodes Incorporated presents DMT12H090LFDF4-7, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, DMT12H090LFDF4-7 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 115 V
- Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
- Rds On (Max) @ Id, Vgs: 90mOhm @ 3.5A, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 251 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 900mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X2-DFN2020-6
- Package / Case: 6-PowerXDFN
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