NP75P04YLG-E1-AY
Renesas Electronics America Inc
Renesas Electronics America Inc
MOSFET P-CH 40V 75A 8HSON
$1.98
Available to order
Reference Price (USD)
1+
$1.98000
500+
$1.9602
1000+
$1.9404
1500+
$1.9206
2000+
$1.9008
2500+
$1.881
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose NP75P04YLG-E1-AY by Renesas Electronics America Inc. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with NP75P04YLG-E1-AY inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
- Rds On (Max) @ Id, Vgs: 9.7mOhm @ 37.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4800 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta), 138W (Tc)
- Operating Temperature: 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-HSON
- Package / Case: 8-SMD, Flat Lead Exposed Pad
