PTFB192557SHV1XWSA1
Infineon Technologies
Infineon Technologies
IC FET RF LDMOS H-34288G-4/2
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Unlock next-gen RF performance with PTFB192557SHV1XWSA1 from Infineon Technologies. These MOSFETs feature innovative gallium nitride (GaN) technology for higher efficiency in compact form factors, revolutionizing telecom infrastructure and defense electronics. Their lead-free compliance meets global environmental standards. Let s discuss your application needs contact our sales team now!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 1.99GHz
- Gain: 19dB
- Voltage - Test: 28 V
- Current Rating (Amps): -
- Noise Figure: -
- Current - Test: 1.35 A
- Power - Output: 60W
- Voltage - Rated: 65 V
- Package / Case: H-34288G-4/2
- Supplier Device Package: H-34288G-4/2
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