BLF4G10LS-160,112
NXP USA Inc.
NXP USA Inc.
FET RF 65V 894.2MHZ SOT502B
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Engineered for excellence, NXP USA Inc.'s BLF4G10LS-160,112 RF MOSFETs offer best-in-class power density and thermal resistance. Ideal for amateur radio and test instrumentation, these transistors minimize signal loss while maximizing output. Backed by rigorous quality testing. Start your procurement process inquire today about bulk order discounts!
Specifications
- Product Status: Obsolete
- Transistor Type: LDMOS
- Frequency: 894.2MHz
- Gain: 19.7dB
- Voltage - Test: 28 V
- Current Rating (Amps): 15A
- Noise Figure: -
- Current - Test: 900 mA
- Power - Output: 160W
- Voltage - Rated: 65 V
- Package / Case: SOT-502B
- Supplier Device Package: SOT502B
Related Products
Wolfspeed, Inc.
PXAC261002FC-V1
Freescale Semiconductor
MRF6V2300NR1
NXP USA Inc.
MRF21045LR5
onsemi
2SK436-19-TB-E
NXP USA Inc.
MRFG35030R5
NXP USA Inc.
MMRF1306HSR5
NXP USA Inc.
AFT18S260W31SR3
NXP USA Inc.
BLF6G27LS-50BN,118
Infineon Technologies
PTFA080551EV4T500XWSA1
Infineon Technologies